Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
نویسندگان
چکیده
Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.
منابع مشابه
Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.
A detailed understanding of the resistive switching mechanisms that operate in redox-based resistive random-access memories (ReRAM) is key to controlling these memristive devices and formulating appropriate design rules. Based on distinct fundamental switching mechanisms, two types of ReRAM have emerged: electrochemical metallization memories, in which the mobile species is thought to be metal ...
متن کاملHighly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon.
TiO2 is being widely explored as an active resistive switching (RS) material for resistive random access memory. We report a detailed analysis of the RS characteristics of single-crystal anatase-TiO2 thin films epitaxially grown on silicon by atomic layer deposition. We demonstrate that although the valence change mechanism is responsible for the observed RS, single-crystal anatase-TiO2 thin fi...
متن کاملRandom telegraph noise and resistance switching analysis of oxide based resistive memory.
Resistive random access memory (RRAM) devices (e.g."memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detail...
متن کاملResistance switching of Au-implanted-ZrO2 film for nonvolatile memory application
The resistive switching characteristics and switching mechanisms of the Au-implanted-ZrO2 film are extensively investigated for nonvolatile memory applications. Reversible resistance-switching behavior from a high resistance to low resistance state can be traced by dc voltage and pulse voltage. After more than 200 dc switching cycles, the resistance ratio between the high and low resistance sta...
متن کاملBipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd₂O₃) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd₂O₃ thi...
متن کامل